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_aQC612.S4 _bI58 vol. 6 |
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_a541.37 _bRHI |
| 100 | 1 | _aRhodes, R. G. | |
| 245 | 1 | 0 | _aImperfections and active centres in semiconductors. |
| 260 |
_aOxford, _aNew York, _bPergamon Press, _c1964. |
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| 300 |
_axii, 373 p. _billus., diagrs. _c24 cm. |
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| 490 | 1 |
_aInternational series of monographs on semiconductors, _vv. 6 |
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| 504 | _aBibliography: p. 355-368. | ||
| 650 | 0 | _aSemiconductors. | |
| 650 | 0 | _aCrystallography. | |
| 830 | 0 |
_aInternational series of monographs on semiconductors ; _vv. 6. |
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