| 000 | 00951cam a2200289 4500 | ||
|---|---|---|---|
| 001 | 4109510 | ||
| 003 | BD-DhUL | ||
| 005 | 20140924103301.0 | ||
| 008 | 700825s1970 nyua b 001 0 eng | ||
| 010 | _a 75107563 | ||
| 020 | _a0124808506 | ||
| 040 |
_aDLC _cBD-DhUL _dBD-DhUL |
||
| 050 | 0 | 0 |
_aTK7871.85 _b.M38 |
| 082 | 0 | 0 |
_a537.56 _219 _bMAI |
| 100 | 1 |
_aMayer, James W., _d1930- |
|
| 245 | 1 | 0 |
_aIon implantation in semiconductors, silicon and germanium _c[by] James W. Mayer, Lennart Eriksson and John A. Davies. |
| 260 |
_aNew York, _bAcademic Press, _c1970. |
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| 300 |
_axiii, 280 p. : _billus. ; _c24 cm. |
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| 365 |
_aUSD _b100.65 |
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| 504 | _aIncludes bibliographical references. | ||
| 650 | 0 | _aIon implantation. | |
| 650 | 0 | _aSemiconductors. | |
| 700 | 1 |
_aEriksson, Lennart, _d1938- _ejoint author. |
|
| 700 | 1 |
_aDavies, John Arthur, _d1927- _ejoint author. |
|
| 906 |
_a7 _bcbc _corignew _d2 _encip _f19 _gy-gencatlg |
||
| 942 |
_2ddc _cBK |
||
| 999 |
_c12644 _d12644 |
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