materials and devices Maiti, C. K. Chakrabarti, N. B. Ray, S. K. Dr Institution of Electrical Engineers text enk London Institution of Electrical Engineers c2001 2001 monographic eng

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xii, 496 p. : ill. ; 25 cm. Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics. edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray. Includes bibliographical references and index. Heterostructures Silicon Heterostructures Silicon Heterostruktur Silicium QC611.8.S5 S77 2001 621.38152 620.193 STR RL 624 ELT 329f PHY 687f UP 3150 London : Institution of Electrical Engineers, c2001 (OCoLC)606912463 9780852967782 0852967780 2014395719 UKM 140804 20150118190223.0 18253059 eng