02156cam a22005297a 4500 18253059 BD-DhUL 20150118190223.0 140804s2001 enka 001 0 eng 2014395719 GBA0V2612 bnb 010350839 Uk 9780852967782 0852967780 (OCoLC)ocm45351181 UKM eng UKM IXA C#P UNA BAKER YDXCP OCLCG STF DEBBG OCLCO OCLCF DLC BD-DhUL lccopycat QC611.8.S5 S77 2001 621.38152 21 620.193 21 STR RL 624 blsrissc ELT 329f stub PHY 687f stub UP 3150 rvk Strained silicon heterostructures : materials and devices / edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray. London : Institution of Electrical Engineers, c2001. xii, 496 p. : ill. ; 25 cm. US$ 92.07 IEE circuits, devices and systems series 12 Includes bibliographical references and index. Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics. Heterostructures. Silicon. Heterostructures. fast Silicon. fast Heterostruktur. swd Silicium. swd Maiti, C. K. Chakrabarti, N. B. Ray, S. K., Dr. Institution of Electrical Engineers. Online version: Strained silicon heterostructures. London : Institution of Electrical Engineers, c2001 (OCoLC)606912463 IEE circuits, devices and systems series ; 12. 7 cbc copycat 2 ncip 20 y-gencatlg ddc BK rl09 2014-08-04 z-processor rl09 2014-08-29 ; to CALM 33065 33065 0 0 ddc 0 621_381520000000000 0 NFIC 61945 DUSL DUSL GEN 2012-12-15 Purchased 621.38152 477293 2015-01-18 1 2015-01-18 BK