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  <titleInfo>
    <title>Fundamentals of silicon integrated device technology</title>
    <subTitle>vol. 2, Bipolar and unipolar transistors</subTitle>
  </titleInfo>
  <name type="personal">
    <namePart>Burger, R. M. (Robert M.)</namePart>
    <namePart type="date">1927-</namePart>
    <role>
      <roleTerm type="text">ed.</roleTerm>
    </role>
  </name>
  <name type="personal">
    <namePart>Donovan, R. P.</namePart>
    <role>
      <roleTerm type="text">jt. ed.</roleTerm>
    </role>
  </name>
  <typeOfResource>text</typeOfResource>
  <genre authority="marc">bibliography</genre>
  <originInfo>
    <place>
      <placeTerm type="code" authority="marccountry">nju</placeTerm>
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    <place>
      <placeTerm type="text">Englewood Cliffs, N.J</placeTerm>
    </place>
    <publisher>Printice- Hall</publisher>
    <dateIssued>c1968</dateIssued>
    <dateIssued encoding="marc">1968</dateIssued>
    <issuance>monographic</issuance>
  </originInfo>
  <language>
    <languageTerm authority="iso639-2b" type="code">eng</languageTerm>
  </language>
  <physicalDescription>
    <form authority="marcform">print</form>
    <extent> v. : ill. ;  24 cm.</extent>
  </physicalDescription>
  <tableOfContents>v. 1 Oxidation, diffusion, and epitaxy. v. 2. Bipolar and unipolar transistors.</tableOfContents>
  <note type="statement of responsibility">edited by R.M. Burger and R.P. Donovan.</note>
  <note>Includes bibliographical references and index.</note>
  <subject authority="lcsh">
    <topic>Microelectronics</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Silicon</topic>
  </subject>
  <classification authority="lcc">TK7874 .B8</classification>
  <classification authority="ddc">621.381 BUF</classification>
  <relatedItem type="series">
    <titleInfo>
      <title>Prentice-Hall electrical engineering series</title>
    </titleInfo>
  </relatedItem>
  <identifier type="lccn">67013671</identifier>
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