<?xml version="1.0" encoding="UTF-8"?>
<metadata
  xmlns="http://example.org/myapp/"
  xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"
  xsi:schemaLocation="http://example.org/myapp/ http://example.org/myapp/schema.xsd"
  xmlns:dc="http://purl.org/dc/elements/1.1/"
  xmlns:dcterms="http://purl.org/dc/terms/"><dc:Title>Instabilities in MOS devices / J. R. Davis.</dc:Title>
<dc:Creator>Davis, J. R. (John Richard), 1951-</dc:Creator>
<dc:Subject>Metal oxide semiconductors.</dc:Subject>
<dc:Subject>TK7871.99.M44 D38</dc:Subject>
<dc:Subject>621.38152 A261i</dc:Subject>
<dc:Description>Includes bibliographical refererences (p. 151-175) and index.</dc:Description>
<dc:Publisher>New York : Gordon and Breach Science Publishers,</dc:Publisher>
<dc:Date>c1981.</dc:Date>
<dc:Date>c1981.</dc:Date>
<dc:Date>1981</dc:Date>
<dc:Type>Text</dc:Type>
<dc:Format>xv, 175 p. :</dc:Format>
<dc:Language>eng</dc:Language>
<dc:Relation>Electrocomponent science monographs ; v. 12</dc:Relation>

</metadata>