01106cam a2200301 a 45000010008000000030008000080050017000160080041000330100017000740200028000910400027001190500023001460820023001691000035001922450085002272500012003122600031003243000035003553650014003905000040004045040051004446500055004956500013005506500022005637400057005858560088006428560074007303470762BD-DhUL20150115115332.0931007s1994    nyua     b    001 0 eng    a   93040716   a0471580058 (alk. paper)  aDLCcDLCdDLCdBD-DhUL00aTK7874b.G473 199400a621.38152223bGHV1 aGhandhi, Sorab Khushro,d1928-10aVLSI fabrication principles :bsilicon and gallium arsenide /cSorab K. Ghandhi.  a2nd ed.  aNew York :bWiley,cc1994.  axxiv, 834 p. :bill. ;c25 cm.  aUSDb7.50  a"A Wiley-Interscience publication."  aIncludes bibliographical references and index. 0aIntegrated circuitsxVery large scale integration. 0aSilicon. 0aGallium arsenide.0 aVery large scale integration fabrication principles.423Publisher descriptionuhttp://www.loc.gov/catdir/description/wiley037/93040716.html4 3Table of Contentsuhttp://www.loc.gov/catdir/toc/onix05/93040716.html