Wide band gap semiconductor nanowires, 2 : Heterostructures and optoelectronic devices / edited by Vincent Consonni, Guy Feuillet. [electronic resource] Heterostructures and optoelectronic devices Consonni, Vincent, editor. Feuillet, Guy, editor. Optoelectronic devices. Nanowires. TK7874.85 .W53 2014 621.381045 23 Includes bibliographical references. Print version record. This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and. 2014 Text 1 online resource : http://onlinelibrary.wiley.com/book/10.1002/9781118984291 eng Electronics engineering series Electronics engineering series (London, England) Wide band gap semiconductor nanowires Wide band gap semiconductor nanowires