06436cam a2200781 i 4500 ocn881418299 OCoLC 20171029123641.0 m o d cr ||||||||||| 140613s2014 si a ob 001 0 eng 2014023306 9781118313558 (ePub) 1118313550 (ePub) 9781118313541 (Adobe PDF) 1118313542 (Adobe PDF) 9781118313534 1118313534 9781118313527 (cloth) 1118313526 (cloth) AU@ 000053968126 CHBIS 010276077 CHBIS 010441668 CHVBK 332017850 CHVBK 334095247 DEBBG BV042487457 DEBSZ 434828556 NLGGC 382545524 NZ1 15910066 DEBBG BV043396915 (OCoLC)881418299 (OCoLC)902744442 (OCoLC)927507781 CL0500000549 Safari Books Online DLC eng rda pn DLC YDX OCLCF N$T E7B DG1 YDXCP MYG IEEEE CDX RECBK UMI COO DEBBG OCLCO OCLCQ EBLCP B24X7 OTZ OCLCQ pcc MAIN TK7871.15.S56 TEC 009070 bisacsh 621.3815/2 23 Kimoto, Tsunenobu, 1963- Fundamentals of silicon carbide technology : growth, characterization, devices and applications / Tsunenobu Kimoto, James A. Cooper. [electronic resource] Fundamentals of SiC technology Singapore : Wiley, [2014] 1 online resource (xiv, 538 pages) : illustrations text txt rdacontent computer n rdamedia online resource nc rdacarrier Includes bibliographical references and index. ""Title Page""; ""Copyright""; ""About the Authors""; ""Preface""; ""Chapter 1: Introduction""; ""1.1 Progress in Electronics""; ""1.2 Features and Brief History of Silicon Carbide""; ""1.3 Outline of This Book""; ""References""; ""Chapter 2: Physical Properties of Silicon Carbide""; ""2.1 Crystal Structure""; ""2.2 Electrical and Optical Properties""; ""2.3 Thermal and Mechanical Properties""; ""2.4 Summary""; ""References""; ""Chapter 3: Bulk Growth of Silicon Carbide""; ""3.1 Sublimation Growth""; ""3.2 Polytype Control in Sublimation Growth"" ""3.3 Defect Evolution and Reduction in Sublimation Growth""""3.4 Doping Control in Sublimation Growth""; ""3.5 High- Temperature Chemical Vapor Deposition""; ""3.6 Solution Growth""; ""3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition""; ""3.8 Wafering and Polishing""; ""3.9 Summary""; ""References""; ""Chapter 4: Epitaxial Growth of Silicon Carbide""; ""4.1 Fundamentals of SiC Homoepitaxy""; ""4.2 Doping Control in SiC CVD""; ""4.3 Defects in SiC Epitaxial Layers""; ""4.4 Fast Homoepitaxy of SiC""; ""4.5 SiC Homoepitaxy on Non-standard Planes"" ""4.6 SiC Homoepitaxy by Other Techniques""""4.7 Heteroepitaxy of 3C-SiC""; ""4.8 Summary""; ""References""; ""Chapter 5: Characterization Techniques and Defects in Silicon Carbide""; ""5.1 Characterization Techniques""; ""5.2 Extended Defects in SiC""; ""5.3 Point Defects in SiC""; ""5.4 Summary""; ""References""; ""Chapter 6: Device Processing of Silicon Carbide""; ""6.1 Ion Implantation""; ""6.2 Etching""; ""6.3 Oxidation and Oxide/SiC Interface Characteristics""; ""6.4 Metallization""; ""6.5 Summary""; ""References""; ""Chapter 7: Unipolar and Bipolar Power Diodes"" ""7.1 Introduction to SiC Power Switching Devices""""7.2 Schottky Barrier Diodes (SBDs)""; ""7.3 pn and pin Junction Diodes""; ""7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes""; ""References""; ""Chapter 8: Unipolar Power Switching Devices""; ""8.1 Junction Field-Effect Transistors (JFETs)""; ""8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)""; ""References""; ""Chapter 9: Bipolar Power Switching Devices""; ""9.1 Bipolar Junction Transistors (BJTs)""; ""9.2 Insulated-Gate Bipolar Transistors (IGBTs)""; ""9.3 Thyristors""; ""References"" ""Chapter 10: Optimization and Comparison of Power Devices""""10.1 Blocking Voltage and Edge Terminations for SiC Power Devices""; ""10.2 Optimum Design of Unipolar Drift Regions""; ""10.3 Comparison of Device Performance""; ""References""; ""Chapter 11: Applications of Silicon Carbide Devices in Power Systems""; ""11.1 Introduction to Power Electronic Systems""; ""11.2 Basic Power Converter Circuits""; ""11.3 Power Electronics for Motor Drives""; ""11.4 Power Electronics for Renewable Energy""; ""11.5 Power Electronics for Switch-Mode Power Supplies"" "Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field."-- Portion of summary from book. Print version record and CIP data provided by publisher. Silicon carbide. Semiconductors. Integrated circuits. Silicon carbide. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Integrated circuits. fast (OCoLC)fst00975535 Semiconductors. fast (OCoLC)fst01112198 Silicon carbide. fast (OCoLC)fst01118657 Electronic books. Cooper, James A., 1946- Print version: Kimoto, Tsunenobu, 1963- Fundamentals of silicon carbide technology. Singapore : John Wiley & Sons Singapore Pte. Ltd., [2014] 9781118313527 (DLC) 2014016546 (OCoLC)881406991 http://onlinelibrary.wiley.com/book/10.1002/9781118313534 Wiley Online Library ddc BK 207533 207533