Fundamentals of silicon carbide technology : growth, characterization, devices and applications / Tsunenobu Kimoto, James A. Cooper. [electronic resource] Fundamentals of SiC technology Kimoto, Tsunenobu, 1963- Cooper, James A., 1946- Silicon carbide. Semiconductors. Integrated circuits. TK7871.15.S56 621.3815/2 23 Includes bibliographical references and index. Print version record and CIP data provided by publisher. "Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field."-- Portion of summary from book. 2014 Text 1 online resource (xiv, 538 pages) : http://onlinelibrary.wiley.com/book/10.1002/9781118313534 eng Fundamentals of silicon carbide technology. Fundamentals of silicon carbide technology.