04577cam a2200685Ii 4500 ocn881183468 OCoLC 20171030094334.0 m o d cr cnu---unuuu 140609s2014 enk o 000 0 eng d 9781118985120 (electronic bk.) 1118985125 (electronic bk.) 9781118985137 (electronic bk.) 1118985133 (electronic bk.) 9781848216556 1848216556 NZ1 15592149 NZ1 15906903 CHVBK 33409240X CHBIS 010442064 DEBSZ 409828009 DEBSZ 425888312 DEBSZ 449433234 DEBBG BV043610176 DEBBG BV043396865 (OCoLC)881183468 (OCoLC)881417031 N$T eng rda pn N$T DG1 E7B IDEBK CUS YDXCP CDX OCLCF RECBK EBLCP DEBSZ COO DEBBG MAIN TK7871.99.M44 B49 2014eb TEC 009070 bisacsh 621.381 23 Beyond-CMOS nanodevices 2 / edited by Francis Balestra. [electronic resource] Beyond CMOS nanodevices 2 London : ISTE ; Hoboken, NJ : Wiley, 2014. 1 online resource (xvi, 136 pages) text txt rdacontent computer c rdamedia online resource cr rdacarrier ISTE Cover; Title Page; Copyright; Contents; Acknowledgments; General Introduction; Introduction To Volume 2: Silicon Nanowire Bio-Chemical Sensors; Chapter 1. Small Slope Switches; 1.1. Introduction; 1.2. Tunnel FETs; 1.3. Ferroelectric gate FET; 1.4. Bibliography; Chapter 2. Nanowire Devices; 2.1. Introduction; 2.2. NW for logic CMOS devices; 2.2.1. NW fabrication and technology; 2.2.2. Quantum simulation of NWs; 2.2.3. Electrical characterization of NWs; 2.3. Nano-CMOS ultimate memories; 2.3.1. Overview of memory; 2.3.2. NW application in the evolutive solution path. 2.3.3. NW technology along the disruptive solution path2.4. Conclusions; 2.5. Acknowledgments; 2.6. Bibliography; Chapter 3. Graphene And 2D Layer Devices For More Moore And More-Than-Moore Applications; 3.1. Introduction; 3.2. Graphene; 3.2.1. Graphene fabrication; 3.2.2. Macroscopic graphene field effect transistors; 3.2.3. Graphene nanoribbon transistors; 3.2.4. Bilayer graphene and substrate effects; 3.2.5. RF transistors; 3.2.6. Alternative graphene switches; 3.3. 2D materials beyond graphene; 3.4. Conclusions; 3.5. Acknowledgments; 3.6. Bibliography. Chapter 4. Nanoelectromechanical Switches4.1. Context; 4.2. Nanorelay principles; 4.2.1. The electrostatic actuation; 4.2.2. The piezoelectrical actuation; 4.2.3. The magnetic actuation; 4.2.4. The thermal actuation; 4.3. Electrostatic nanorelay modeling and optimization; 4.3.1. Dynamic modeling; 4.3.2. Quasi-static modeling; 4.4. Technological challenges for NEMS computing; 4.4.1. Low voltage operation; 4.4.2. Reliability of contact technology; 4.5. NEMS-based architectures; 4.5.1. Conventional architectures; 4.5.2. Adiabatic architectures; 4.6. Conclusions; 4.7. Bibliography. This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications. Description based on print version record. Nanoelectronics. Nanostructures. Metal oxide semiconductors, Complementary. TECHNOLOGY & ENGINEERING / Mechanical bisacsh Metal oxide semiconductors, Complementary. fast (OCoLC)fst01017635 Nanoelectronics. fast (OCoLC)fst01741867 Nanostructures. fast (OCoLC)fst01032635 Electronic books. Electronic books. Balestra, Francis, editor. Print version: Beyond CMOS nanodevices 2. 9781848216556 (OCoLC)880400908 (DLC) 2014935738 ISTE. http://onlinelibrary.wiley.com/book/10.1002/9781118985137 Wiley Online Library ddc BK 207498 207498