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  xmlns:dcterms="http://purl.org/dc/terms/"><dc:Title>Imperfections and active centres in semiconductors.</dc:Title>
<dc:Creator>Rhodes, R. G.</dc:Creator>
<dc:Subject>Semiconductors.</dc:Subject>
<dc:Subject>Crystallography.</dc:Subject>
<dc:Subject>QC612.S4 I58 vol. 6</dc:Subject>
<dc:Subject>541.37 RHI</dc:Subject>
<dc:Description>Bibliography: p. 355-368.</dc:Description>
<dc:Publisher>Oxford, New York, Pergamon Press,</dc:Publisher>
<dc:Date>1964.</dc:Date>
<dc:Date>1964.</dc:Date>
<dc:Date>1964</dc:Date>
<dc:Type>Text</dc:Type>
<dc:Format>xii, 373 p.</dc:Format>
<dc:Language>eng</dc:Language>
<dc:Relation>International series of monographs on semiconductors, v. 6</dc:Relation>
<dc:Relation>International series of monographs on semiconductors ; v. 6.</dc:Relation>

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