Strained silicon heterostructures : materials and devices /
by Maiti, C. K; Chakrabarti, N. B; Ray, S. K., Dr; Institution of Electrical Engineers.
Material type:
BookSeries: IEE circuits, devices and systems series: 12.Publisher: London : Institution of Electrical Engineers, c2001Description: xii, 496 p. : ill. ; 25 cm.ISBN: 9780852967782; 0852967780.Subject(s): Heterostructures | Silicon | Heterostructures | Silicon | Heterostruktur | Silicium
Contents:
Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
| Item type | Current location | Collection | Call number | Copy number | Status | Date due | Barcode |
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Books
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Dhaka University Science Library General Stacks | Non Fiction | 621.38152 (Browse shelf) | 1 | Available | 477293 |
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| 621.38151 WOS Short-wave listener's guide / | 621.38151 WOT The transistor; | 621.38151 YUD Design of modern transistor circuits / | 621.38152 Strained silicon heterostructures : | 621.38152 A261i Instabilities in MOS devices / | 621.38152 A366g Growth of crystalline semiconductor materials on crystal surfaces / | 621.38152 ADP Properties of group-IV, III-V and II-VI semiconductors / |
Includes bibliographical references and index.
Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
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